A Modified Noise Analysis of a Common Source ̶ Common Gate Low Noise Transconductance Amplifier for Sub-micron Technologies
Authors
Abstract:
This paper is based on analysis of a common source - common gate low noise transconductance amplifier (CS-CG LNTA). Conventional noise analyses equations are modified by considering to the low output impedance of the sub-micron transistors and also, parasitic gate-source capacitance. The calculated equations are more accurate than calculated equations in other works. Also, analyses show that the noise of the tail transistor, which is utilized to bias the common gate transistor, will limit noise canceling advantages. So, the common gate transistor is biased by a resistor. That leads to a significant improvement in noise figure. By utilizing a Taylor series expression, a closed-form equation is obtained to calculate IIA3 for the first time. Finally, based on the calculated equation a design procedure is proposed.
similar resources
S-Parameter Comparison of Common Source and Common Gate Low Noise Amplifier
Scattering Parameters or S-parameters are complex numbers which tells us about how voltage waves are propagating in the radio-frequency (RF) environment. In this paper common source and other will be the cascoded common gate topologies have been analyzed. Scattering parameter analysis shows that gain and impedance matching is better for CG LNA. S-parameter is an important tool for LNA design, f...
full textA Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers
In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...
full textA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
full textA Sub-mW Low Noise Amplifier for Wireless Sensor Networks
A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of −15.69 dBm, while dissipating 0.74 mW. Such performance make this design suita...
full textUltra low-voltage floating-gate transconductance amplifier
The minimum supply voltage in low-voltage circuits can be defined as Vsup,min = 2(Vgs+Vsat) [1]. Low-voltage circuits are able to operate on a supply voltage of two stacked gate-source voltages and two saturation voltages. Differential amplifiers are biased with a transistor feeding a differential pair, where the current level is set by the bias transistor. The minimum input voltage in a NMOS i...
full textA Broadband Low-Noise-Amplifier
This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...
full textMy Resources
Journal title
volume 31 issue 11
pages 1903- 1909
publication date 2018-11-01
By following a journal you will be notified via email when a new issue of this journal is published.
Hosted on Doprax cloud platform doprax.com
copyright © 2015-2023